Impact of AlOx interfacial layer and switching mechanism in W/AlOx/TaOx/TiN RRAMs

Author

Chakrabarti, Subit ; Jana, D. ; Dutta, Maitreyee ; Maikap, S. ; Yi-Yan Chen ; Jer-Ren Yang

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., KweiShan, Taiwan

fYear

2014

fDate

18-21 May 2014

Firstpage

1

Lastpage

4

Abstract

Effects of AlO_x interfacial layer in the W/AlO_x/TaO_x/TiN structures have been investigated for the first time. This RRAM device shows long endurance of 10⁶ cycles and good retention at 85°C for a low current compliance of 100 μA. A physics based simulation is studied to understand the set and reset mechanism of RRAM. The nature of ions migration, potential profile and temperature of filament during switching is explained using numerical simulation done by MATLAB.

Keywords

aluminium compounds; random-access storage; switching; tantalum compounds; titanium compounds; tungsten; MATLAB; RRAM; W-AlO_x-TaO_x-TiN; filament temperature; interfacial layer; ion migration; low current compliance; potential profile; reset mechanism; resistive random access memory; switching mechanism; Equations; Ions; Materials; Mathematical model; Numerical models; Resistance; Switches; AlOx; MATLAB simulation; RRAM interfacial layer; TaOx; switching mechanism;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2014 IEEE 6th International

Conference_Location

Taipei

Print_ISBN

978-1-4799-3594-9

Type

conf

DOI

10.1109/IMW.2014.6849394

Filename

6849394