Optimization of Body Diode Reverse Recovery Characteristics of Lateral Power MOSFETs for Synchronous Rectifier DC-DC Converters

Author

Xiong, Y. ; Jia, H. ; Deschaine, W. ; Sun, S. ; Cheng, X. ; Dashney, G. ; Okada, D. ; Shen, Z.J.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL

fYear

2008

Firstpage

99

Lastpage

102

Abstract

This paper investigates the poor body diode reverse recovery characteristics of lateral power MOSFETs. It is found that the lightly doped P-substrate accommodates an excessive amount of minority carrier storage charge when the body diode between the P-substrate and N-drain is forward biased. The excessive storage charge causes a long tail in the reverse recovery current waveform of the body diode. Two LDMOS structural variations are explored to improve the body diode performance for hard-switching synchronous rectifier DC/DC converter applications. Both simulation and experimental results show that over 90% reduction in reverse recovery charge can be achieved with the new device structures.

Keywords

DC-DC power convertors; diodes; power MOSFET; rectifiers; LDMOS structural variations; N-drain; body diode reverse recovery characteristics; doped P-substrate; forward biased; lateral power MOSFET; minority carrier storage charge; synchronous rectifier DC-DC converters; Application software; Capacitance; Charge carrier processes; DC-DC power converters; MOSFETs; Probability distribution; Rectifiers; Semiconductor device modeling; Semiconductor diodes; Zero current switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1532-8

Electronic_ISBN

978-1-4244-1533-5

Type

conf

DOI

10.1109/ISPSD.2008.4538907

Filename

4538907