Title :
New method for making Al single crystal interconnections on amorphous insulators
Author :
Wada, Jun-ichi ; Suguro, Kyoichi ; Hayasaka, Nobuo ; Okano, Haruo
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
The authors point out that Al thin films fill in the grooves on SiO/sub 2/ when no surface native oxide of Al exists. Analytical calculations have shown that the complete Al filling occurs because of the reduction of the total free energy for the Al/SiO/sub 2/ system. The filled Al lines in the grooves are single crystalline. The filled single crystal Al interconnections have excellent endurance against electromigration compared with the conventional polycrystalline interconnections.<>
Keywords :
VLSI; aluminium; circuit reliability; electromigration; life testing; metallisation; Al single crystal interconnections; Al-SiO/sub 2/; SiO/sub 2/; ULSI; acceleration test; amorphous insulators; endurance against electromigration; filled lines; thin films; Amorphous materials; Annealing; Artificial intelligence; Crystallization; Grain size; Insulation; Plasma temperature; Sputtering; Transistors; Ultra large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283299
