Title :
High side n-channel and bidirectional Trench Lateral Power MOSFETs on one chip for DCDC converter ICs
Author :
Sawada, Mutsumi ; Yamaji, Masaharu ; Matsunaga, Shinichiro ; Iwaya, Masanobu ; Takahashi, Hidenori ; Yoshiki, Tsuyoshi ; Jonishi, Akihiro ; Kitamura, Akio ; Fujishima, Naoto
Author_Institution :
Fuji Electr. Device Technol. Co., Ltd., Nagano
Abstract :
Trench lateral power MOSFETs (TLPMs) are suitable for one chip power ICs due to its low specific on- resistance and ease of fabrication with CDMOS devices. In our smart power IC process we integrated both the high side n- channel and bidirectional TLPMs in one chip. In addition, better device characteristics of both devices were obtained with the process integration technology. The high side MOSFET shows 20 mOmegamm2 specific on-resistance with 25 V breakdown voltage and excellent reliability. The bidirectional MOSFET shows 7.0 mOmegamm2 specific on-resistance, which represents 67% of the current mass production value, with a breakdown voltage of 25 V.
Keywords :
DC-DC power convertors; power MOSFET; power integrated circuits; CDMOS devices; DCDC converter IC; bidirectional trench lateral power MOSFET; chip power IC; process integration technology; smart power IC; Bidirectional control; Electrodes; Etching; Fabrication; Lithography; MOSFETs; Mass production; Power integrated circuits; Power semiconductor devices; Switches;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538909
