Title :
Assembly-stress-mechanism in pad areas on high-k/metal gate transistors
Author :
Ota, Yukitoshi ; Itoh, Fumito ; Ishikawa, Kazuhiro ; Hagihara, Kiyomi ; Matsumoto, Takeshi ; Iwase, Teppei ; Itoh, Yutaka ; Hirano, Hiroshige
Author_Institution :
Panasonic Corp., Nagaokakyo, Japan
Abstract :
We reveal the mechanism of assembly stress in pad areas of flip chip package by using our new local stress evaluation technique in μm resolution. The technique is designed to evaluate the characteristic change of high-k/metal gate transistors (Trs) that are arrayed in μm pitch.
Keywords :
flip-chip devices; semiconductor device manufacture; transistors; assembly-stress-mechanism; flip chip package; high-k/metal gate transistors; pad areas; Apertures; Assembly; Metals; Silicon; Stress; Substrates; Temperature dependence;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556189
