An 80V class Silicon Lateral Trench Power MOSFET for High Frequency Switching Applications

An 80 V class integrable lateral trench power MOSFET based on a shallow trench (~1.0 mum) structure with a low Figure of Merit (R_ontimesQ_g) for high frequency switching applications is presented. A simulated optimized MOSFET exhibits a Figure of Merit of 240 mOhm-nC, which is over 2.5X improvement on the best reported lateral trench power MOSFETs in the same voltage class. Prototype devices from the first silicon run exhibit a threshold voltage of IV, specific on- resistance of 3.05 mOhm-cm², breakdown voltage of 55 V and Figure of Merit of 645 mOhm-nC at a gate bias of 10 V.