The hot-carrier induced degradation mechanisms of 0.8 mu m LDD p-MOSFET with 850 degrees C wet gate oxidation

It is pointed out that degradation of the saturation drain current proceeds logarithmically in stress time while that of the linear current saturates. In addition to the trapping of electrons in gate oxide layers, donorlike interface states were generated by the hot carrier injection. The presence of the interface states was verified by measuring the degradation of the linear current and the threshold voltage after trapped electrons in the gate oxide are fully released. The interface state densities were estimated by fitting the calculated drain current degradation to the measured one by using two dimensional process and device simulators.<>