Title :
The hot-carrier induced degradation mechanisms of 0.8 mu m LDD p-MOSFET with 850 degrees C wet gate oxidation
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
It is pointed out that degradation of the saturation drain current proceeds logarithmically in stress time while that of the linear current saturates. In addition to the trapping of electrons in gate oxide layers, donorlike interface states were generated by the hot carrier injection. The presence of the interface states was verified by measuring the degradation of the linear current and the threshold voltage after trapped electrons in the gate oxide are fully released. The interface state densities were estimated by fitting the calculated drain current degradation to the measured one by using two dimensional process and device simulators.<>
Keywords :
carrier lifetime; electron traps; hot carriers; insulated gate field effect transistors; interface electron states; oxidation; reliability; semiconductor device testing; 0.8 micron; 850 C; LDD p-MOSFET; donorlike interface states; gate oxide layers; hot-carrier induced degradation mechanisms; saturation drain current; trapping of electrons; wet gate oxidation; Current measurement; Degradation; Density measurement; Electron traps; Hot carrier injection; Hot carriers; Interface states; State estimation; Stress; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283304
