• DocumentCode
    1726657
  • Title

    A Gate-Controllable High-Voltage SCR Device with High Performance in ESD Protection and Latch-up Immunity

  • Author

    Chien, Tuo-Hsin ; Hsu, Klaus Y J

  • Author_Institution
    Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu
  • fYear
    2008
  • Firstpage
    131
  • Lastpage
    132
  • Abstract
    A simple gate-controllable high-voltage silicon-controlled rectifier (GC-HVSCR) is proposed in this work. With simply using an integrated control nMOS, the device can provide ESD protection while avoiding the conventionally annoying latch-up problem in SCR under normal circuit operation condition. The behavior of the proposed device has been studied by simulations and verified by real implementation in a 0.5-mum high-voltage (30 V) CMOS process.
  • Keywords
    MOS integrated circuits; thyristors; gate-controllable high-voltage SCR device; integrated control nMOS; latch-up immunity; silicon controlled rectifier; voltage 30 V; CMOS process; Cathodes; Centralized control; Circuit simulation; Electron devices; Electrostatic discharge; MOS devices; Protection; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1532-8
  • Electronic_ISBN
    978-1-4244-1533-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2008.4538915
  • Filename
    4538915
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1726657