Parameter extraction guidelines for hot-electron reliability simulation

Detailed NMOSFET parameter extraction guidelines for the hot-electron degradation models used in many circuit-level reliability simulation tools are proposed. Accurate calibration of these models to a particular technology is shown to require accounting for the asymptotic and variable power-law time dependence of hot-electron degradation, and the impact of the local oxide electric field on the critical energy for interface damage. In addition, statistical analysis is used to determine the prediction intervals within which hot-electron lifetime can be estimated, and to offer insight into developing more efficient and precise testing methodologies.<>