Title :
Effects of iron contamination of thin oxide breakdown and reliability characteristics
Author :
Henley, Worth B. ; Jastrzebski, Lubek ; Haddad, Nadim F.
Author_Institution :
Center for Microelectron. Res., Univ. of South Florida, Tampa, FL, USA
Abstract :
The effect of iron contamination in silicon on the properties of thermally grown thin oxides is studied through electrical modeling and experimental MOSDOT testing. Iron concentration is measured using a surface photovoltage diffusion length measurement technique. Failure mechanisms related to iron contamination are proposed. Contamination limits for various gate oxide thicknesses are defined. Experimental results show that reduction of oxide thickness from 20 nm to 10 nm requires a reduction in iron contamination by 100 times.<>
Keywords :
electric breakdown of solids; failure analysis; metal-insulator-semiconductor devices; reliability; semiconductor device models; semiconductor device testing; 20 to 10 nm; MOSDOT capacitors; MOSDOT testing; Si-SiO/sub 2/:Fe; TDDB; breakdown model; contamination effects; electrical modeling; failure mechanisms; reduction of oxide thickness; reliability characteristics; surface photovoltage diffusion length measurement; thin oxide breakdown; Annealing; Dielectrics; Electric breakdown; Iron; Length measurement; Oxidation; Pollution measurement; Silicon; Surface contamination; Testing;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283308
