Analysis of a p+p-n-n+ diode structure

In this paper we present a p⁺p^-n^-n⁺ diode structure, an extension of the FM-diode the authors have discussed in previous work. This design can be seen as a simplified structure and provides further advantages for the device behavior. Static and dynamic breakdown will be further postponed by remodeling the electric field distribution. Furthermore, in the tail phase of the reverse recovery period, the dynamic avalanche is postponed and ends earlier.