Hole injection oxide breakdown model for very low voltage lifetime extrapolation

Author

Schuegraf, Klaus F. ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1993

Firstpage

7

Lastpage

12

Abstract

An anode hole injection model for silicon dioxide breakdown characterization is presented. The model is valid for a large thickness range between 2.5 nm and at least 13 nm, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses. The model extrapolation predicts Q/sub BD/ and t/sub BD/ behavior including a fluence in excess of 10/sup 7/ C/cm/sup 2/ at V/sub ox/=2.4 V for a 2.5-nm oxide. Moreover, it is fully complementary with the well-known thick oxide 1/E model, while offering the ability to predict oxide reliability for low voltages.<>

Keywords

VLSI; circuit reliability; electric breakdown of solids; failure analysis; semiconductor process modelling; semiconductor-insulator boundaries; tunnelling; 2.5 to 13 nm; IC reliability; Si-SiO/sub 2/; VLSI; anode hole injection model; circuit failure; hole injection oxide breakdown model; large thickness range; very low voltage lifetime extrapolation; Anodes; Breakdown voltage; Circuits; Dielectric breakdown; Electrons; Extrapolation; Low voltage; Predictive models; Scattering; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1993. 31st Annual Proceedings., International

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-0782-8

Type

conf

DOI

10.1109/RELPHY.1993.283311

Filename

283311