A lifetime projection method using series model and acceleration factors for TDDB failures of thin gate oxides

The series model combined with the Weibull distribution is shown to be suitable for characterizing time-dependent dielectric breakdown (TDDB) failures and for projecting the failure rate under normal operating conditions. The validity of existing models for acceleration factors is examined through long-term lifetests with a wide range of stress fields for 11-nm oxides. The resulting curve is found to estimate field acceleration more accurately for lower field regions. The activation energy is also essentially independent of oxide field for thin and near-defect-free oxides.<>