The optimal profile design for SJ-MOSFET fabricated by double-ion-implantation and multi-epitaxial method

Author

Ono, Syotaro ; Saito, Wataru ; Izumisawa, Masaru ; Sumi, Yasuto ; Kurushima, Shoichiro ; Tsuji, Masataka ; Tokano, Ken´ichi ; Yamaguchi, Masakazu

Author_Institution

Discrete Semicond. Div., Toshiba Corp., Kawasaki

fYear

2008

Firstpage

161

Lastpage

164

Abstract

We investigated the profile dependency of specific on-resistance (R_onA) under high- temperature and high-current-density conditions for 600 V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for the first time. The column doping profile is an important design parameter for the R_onA characteristics because the profile affects the electron mobility (mue) in the drift region. The n-column profile was modulated by the column diffusion time (t_diff) in this experiment. The optimal t_diff achieved minimal R_onA under the high-temperature and high-current-density conditions.

Keywords

MOSFET; doping profiles; ion implantation; column diffusion time; column doping profile; double ion implantation; electron mobility; multiepitaxial method; optimal profile design; profile dependency; semisuperjunction MOSFET; voltage 600 V; Acoustic scattering; Current density; Degradation; Doping profiles; Electron mobility; Facsimile; Impurities; MOSFETs; Power semiconductor devices; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1532-8

Electronic_ISBN

978-1-4244-1533-5

Type

conf

DOI

10.1109/ISPSD.2008.4538923

Filename

4538923