Title :
Anode Design Variation in 1200-V Trench Field-stop Reverse-conducting IGBTs
Author :
Voss, S. ; Niedernostheide, F.-J. ; Schulze, H.-J.
Abstract :
Reverse-conducting (RC) IGBTs with a monolithically integrated reverse diode are meanwhile available for soft-switching applications such as lamp ballast or inductive cooking as well as for hard-switching applications such as inverters in refrigerators, air conditioners or general purpose drives. In this paper, we present results on the electrical behavior of 1200-V RC-IGBTs designed predominantly for soft switching applications. Miscellaneous parameters of the RC- IGBT, namely its thickness, the field-stop profile and the p-emitter dose were varied under the additional constraint to improve the behavior also for more severe switching conditions.
Keywords :
insulated gate bipolar transistors; anode design variation; field-stop profile; insulated gate bipolar transistor; reverse conducting IGBT; reverse diode; soft switching application; voltage 1200 V; Anodes; Doping; Electronic ballasts; Insulated gate bipolar transistors; Lamps; Low voltage; Power semiconductor devices; Semiconductor diodes; Switching loss; Thermal resistance;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538925
