DocumentCode
1726931
Title
Anode Design Variation in 1200-V Trench Field-stop Reverse-conducting IGBTs
Author
Voss, S. ; Niedernostheide, F.-J. ; Schulze, H.-J.
fYear
2008
Firstpage
169
Lastpage
172
Abstract
Reverse-conducting (RC) IGBTs with a monolithically integrated reverse diode are meanwhile available for soft-switching applications such as lamp ballast or inductive cooking as well as for hard-switching applications such as inverters in refrigerators, air conditioners or general purpose drives. In this paper, we present results on the electrical behavior of 1200-V RC-IGBTs designed predominantly for soft switching applications. Miscellaneous parameters of the RC- IGBT, namely its thickness, the field-stop profile and the p-emitter dose were varied under the additional constraint to improve the behavior also for more severe switching conditions.
Keywords
insulated gate bipolar transistors; anode design variation; field-stop profile; insulated gate bipolar transistor; reverse conducting IGBT; reverse diode; soft switching application; voltage 1200 V; Anodes; Doping; Electronic ballasts; Insulated gate bipolar transistors; Lamps; Low voltage; Power semiconductor devices; Semiconductor diodes; Switching loss; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location
Orlando, FL
Print_ISBN
978-1-4244-1532-8
Electronic_ISBN
978-1-4244-1533-5
Type
conf
DOI
10.1109/ISPSD.2008.4538925
Filename
4538925
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