Title :
Differentiating impacts of hole trapping vs. interface states on TDDB reduction in thin oxide gated diode structures
Author :
Tang, Yuan ; Chang, Chi ; Haddad, Sameer ; Wang, Arthur ; Lien, Jih
Author_Institution :
Adv. Micro Devices, Sunnyvale, CA, USA
Abstract :
Prestress induced reduction of time dependent dielectric breakdown (TDDB) in MOSFETs is considered. In this study, different prestress conditions using a gated diode structure were designed. Each stress condition is set to generate hole trapping in the thin gate oxide and/or interface states to a different extent, thus allowing differentiation of their effects on TDDB. The experimental data suggest that TDDB reduction is strongly correlated with Si/SiO/sub 2/ interface damage created by hot carriers, while stress induced hole trapping alone does not appear to directly contribute to TDDB reduction.<>
Keywords :
electric breakdown of solids; hole traps; hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device testing; MOSFETs; Si-SiO/sub 2/ interface damage; TDDB reduction; hole trapping; hot carriers; interface states; prestress induced reduction; thin oxide gated diode structures; time dependent dielectric breakdown; Avalanche breakdown; Charge carrier processes; Current measurement; Dielectric breakdown; Diodes; Electron traps; Hot carriers; Interface states; Stress; Tunneling;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283315
