Title :
The CIBH Diode - Great Improvement for Ruggedness and Softness of High Voltage Diodes
Author :
Felsl, H.P. ; Pfaffenlehner, M. ; Schulze, H. ; Biermann, J. ; Gutt, Th ; Schulze, H.-J. ; Chen, M. ; Lutz, J.
Author_Institution :
Infineon Technol. AG, Munich
Abstract :
The concept of controlled injection of backside holes (CIBH) is a novel and path breaking method for the optimization of the electrical characteristics of diodes. Buried p-doped layers at the cathode side of the diode inject holes in the base region during reverse recovery. Due to this injection the snap-off of the diode can be suppressed effectively. The main intention of this paper is to take advantage of the CIBH concept for designing a fast switching 3.3 kV diode with low Vf, low switching losses, high ruggedness and strongly improved softness. A new promising effect of the CIBH design, which we call DSDM (dynamic self damping mode), further increases the soft reverse recovery behavior and results in a nearly snap-off free diode characteristic.
Keywords :
semiconductor diodes; backside holes; controlled injection; dynamic self damping mode; electrical characteristics; high voltage diodes; path breaking method; snap-off free diode characteristic; soft reverse recovery behavior; voltage 3.3 kV; Anodes; Cathodes; Chemical technology; Damping; Plasma simulation; Power electronics; Power semiconductor devices; Semiconductor diodes; Switching loss; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538926
