Title :
III–V: Replacing Si or more than Moore?
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Frequency scaling is coming to an end because of thermal limits as shown in Fig. 1. As an alternative nFET channel material, III-V compound semiconductor has been under intensive investigation in the recent years, hope to provide higher performance and lower power devices. In this paper, we review the status of current III-V research, and discuss the challenges and opportunities for “Moore” and “more than Moore” applications.
Keywords :
III-V semiconductors; field effect transistors; optical interconnections; III-V compound semiconductor; nFET channel material; HEMTs; International Electron Devices Meeting; Logic gates; MODFETs; MOSFETs; Silicon;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556206
