High modulus polycrystalline 3C-SiC technology for RF MEMS

Author

Di Gao ; Wijesundara, M.B.J. ; Carraro, C. ; Low, C.W. ; Howe, R.T. ; Maboudian, R.

Author_Institution

Dept. of Chem. Eng., California Univ., Berkeley, CA, USA

Volume

2

fYear

2003

Firstpage

1160

Abstract

In this paper, we present substantial progress toward achieving a high modulus poly-SiC technology which lays the groundwork for SiC-based microresonators. We report the development of a single-precursor, in situ doped SiC low-pressure chemical vapor deposition (LPCVD) process in a commercial horizontal reactor, as well as the development of a highly selective reactive ion etching process for SiC with the highest reported etch selectivity to SiO/sub 2/. Folded-flexure SiC comb-drive resonators are fabricated and tested at audio frequencies. The measured acoustic velocity of 15 km/s and Young´s modulus of 710 GPa are the highest reported to date for poly-SiC films.

Keywords

Young´s modulus; chemical vapour deposition; micromechanical resonators; semiconductor devices; semiconductor growth; semiconductor thin films; silicon compounds; sputter etching; wide band gap semiconductors; LPCVD; RF MEMS; SiC; SiC low-pressure chemical vapor deposition; SiC-based microresonators; Youngs modulus; folded-flexure SiC comb-drive resonators; high modulus polycrystalline; poly-SiC films; reactive ion etching; Acoustic measurements; Acoustic testing; Chemical technology; Chemical vapor deposition; Etching; Frequency; Inductors; Microcavities; Radiofrequency microelectromechanical systems; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7731-1

Type

conf

DOI

10.1109/SENSOR.2003.1216977

Filename

1216977