Title :
High modulus polycrystalline 3C-SiC technology for RF MEMS
Author :
Di Gao ; Wijesundara, M.B.J. ; Carraro, C. ; Low, C.W. ; Howe, R.T. ; Maboudian, R.
Author_Institution :
Dept. of Chem. Eng., California Univ., Berkeley, CA, USA
Abstract :
In this paper, we present substantial progress toward achieving a high modulus poly-SiC technology which lays the groundwork for SiC-based microresonators. We report the development of a single-precursor, in situ doped SiC low-pressure chemical vapor deposition (LPCVD) process in a commercial horizontal reactor, as well as the development of a highly selective reactive ion etching process for SiC with the highest reported etch selectivity to SiO/sub 2/. Folded-flexure SiC comb-drive resonators are fabricated and tested at audio frequencies. The measured acoustic velocity of 15 km/s and Young´s modulus of 710 GPa are the highest reported to date for poly-SiC films.
Keywords :
Young´s modulus; chemical vapour deposition; micromechanical resonators; semiconductor devices; semiconductor growth; semiconductor thin films; silicon compounds; sputter etching; wide band gap semiconductors; LPCVD; RF MEMS; SiC; SiC low-pressure chemical vapor deposition; SiC-based microresonators; Youngs modulus; folded-flexure SiC comb-drive resonators; high modulus polycrystalline; poly-SiC films; reactive ion etching; Acoustic measurements; Acoustic testing; Chemical technology; Chemical vapor deposition; Etching; Frequency; Inductors; Microcavities; Radiofrequency microelectromechanical systems; Silicon carbide;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1216977
