Chipset for Flexible and Scalable High-Performance Gate Drivers for 1200 V-6500 V IGBTs

The chipset presented here offers an integrated 8A/1W gate driver core, direct driving of external n-type DMOS for easy scaling of the gate power and current, as well as control, monitoring and interfacing for a diversity of applications. It also features a semi-custom array containing preconfigured cells and devices to allow application-specific customization. The DMOS are driven by a regulated gate-source voltage that tracks the process and temperature variations. The chipset includes circuitry to adjust the gate-emitter voltage of the IGBT at turn-on and allow closed-loop control of the collector-emitter voltage of the IGBT at turn-off. The transformer interface transmits command and fault signals via a common channel. In case of a collision, the fault signal dominates both the command signal and noise thanks to a longer pulse duration.