• DocumentCode
    1727177
  • Title

    Time Dependent Isolation Capability of High Voltage Deep Trench Isolation

  • Author

    Lerner, Ralf ; Eckoldt, Uwe ; Schottmann, Klaus ; Heinz, Steffen ; Erler, Klaus ; Lange, Andre ; Ebest, Gunter

  • Author_Institution
    X-FAB Semicond. Foundries AG, Erfurt
  • fYear
    2008
  • Firstpage
    205
  • Lastpage
    208
  • Abstract
    The long term isolation properties of deep trenches in thick SOI have been investigated by current-voltage- characteristics. A strong change of the measured trench leakage current was observed depending on the applied voltage. Further on a marked decrease of the leakage current was observed depending on the duration and polarity of the applied stress. The improvement of the formatted trench isolation was found to be irreversible with time, temperature and voltage polarity. This so-called formation effect can be described by a theoretical simulation model assuming a tunneling process of electrons through the oxide barrier, taking into account the charging and discharging of traps within the trench sidewall oxides. The observed formation effect leads to improved reliability results, wherein the trench is either damaged at the start of the stressing or no dielectric breakdown occurs at all.
  • Keywords
    electric breakdown; isolation technology; silicon-on-insulator; tunnelling; SOI; deep trench isolation; dielectric breakdown; time dependent isolation; tunneling; Chemical technology; Contacts; Current measurement; Foundries; Isolation technology; Leakage current; Power semiconductor devices; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1532-8
  • Electronic_ISBN
    978-1-4244-1533-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2008.4538934
  • Filename
    4538934