Title :
Silicon on replacement insulator (SRI) floating body cell (FBC) memory
Author :
Kim, Seiyon ; Tseng, Ricky J. ; Rachmady, Willy ; Ben Jin ; Shah, Uday ; Ban, Ibrahim ; Avci, Uygar E. ; Chang, Peter L D
Author_Institution :
Technol. Manuf. Group (TMG), Intel Corp., Hillsboro, OR, USA
Abstract :
A 15-nm node floating body cell (FBC) memory was demonstrated utilizing silicon on replacement insulator (SRI) technology on bulk substrate. Highly selective SiGe etch and nano-scale anchors enabled the fabrication of silicon on thin replacement oxide of 12 nm. The memory characteristics show a memory signal of 7 μA and disturb retention time of 20 ms for a 51-nm gate length and 77-nm width device. This is the best FBC memory performance reported on bulk substrate.
Keywords :
nanotechnology; silicon compounds; silicon-on-insulator; FBC memory performance; SiGe etch; floating body cell memory; nano-scale anchors; silicon on replacement insulator; size 12 nm; size 15 nm; size 51 nm; size 77 nm; Doping; Insulators; Logic gates; Performance evaluation; Silicon; Silicon germanium; Substrates;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556213
