Title :
Silicon RF GCMOS performance for portable communications applications
Author :
Spears, E. ; Ngo, D. ; Jun Ma ; Han-Bin Liang ; Spooner, D. ; Ford, J. ; Sunny Cheng ; Courson, B. ; Yeung, B. ; Avalrez, J. ; Bhalla, J. ; Lamey, D.
Author_Institution :
Commun. Products Lab., Motorola Inc., Tempe, AZ, USA
Abstract :
A submicron silicon Radio Frequency Graded Channel MOS (RFGCMOS) technology has been developed for portable communications applications. A 12 mm device at 900 MHz has +29 dBm output power with 12 dB gain and 78% power added efficiency (PAE) at a drain to source voltage of 3.4 V, and drain to source quiescent current of 150 mA. A 256 /spl mu/m device at 900 MHz has 18.9 dB of small signal gain and an associated noise figure of 1.1 dB at VDS=3.0 volts and IDS=2 mA.
Keywords :
MOS integrated circuits; UHF integrated circuits; mobile radio; silicon; 1.1 dB; 12 dB; 18.9 dB; 78 percent; 900 MHz; Si; noise figure; output power; portable communications; power added efficiency; radio frequency graded channel MOS; silicon RF GCMOS technology; small signal gain; Gain measurement; Integrated circuit technology; Noise figure; Noise measurement; Performance gain; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.604409
