Title :
Bistable resistor (biristor) - gateless silicon nanowire memory
Author :
Han, Jin-Woo ; Choi, Yang-Kyu
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
Abstract :
A gateless NPN Si nanowire, which has been named `biristor´ originating from bistable resistor, is presented for a high-density and high-speed memory with a standard CMOS technology. A hysteric I-V characteristic is utilized for the data storage, exhibiting a write and read time of less than 2nsec, a sensing current window of 0.23mA, and a hold retention time of 200msec. The biristor is free of cyclic endurance/reliability problem induced by hot-carrier injection due to the gateless structure.
Keywords :
CMOS memory circuits; hot carriers; integrated circuit reliability; nanowires; resistors; silicon; CMOS technology; biristor; bistable resistor; current 0.23 mA; cyclic endurance; data storage; gateless silicon nanowire memory; hold retention time; hot-carrier injection; read time; sensing current window; time 200 ms; write time; FETs; Latches; Logic gates; Random access memory; Resistors; Sensors; Silicon;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556215
