Title :
Sense Device Structure in Hybrid IGBT with Constant Current Sense Ratio for Entire Collector Current Range
Author :
Yamagiwa, H. ; Saji, T. ; Kaneko, S. ; Takahashi, S. ; Uno, T. ; Sawada, K.
Author_Institution :
Corp. Applic. Specific Stand. Products Div., Matsushita Electr. Ind. Co., Ltd., Kyoto
Abstract :
A new sense device structure is proposed for hybrid IGBTs in which current sensing ratio (CSR) is constant for a wide range of collector currents (ICE)- Hybrid IGBTs are a new type of switching device, with 2 operation modes: MOS operation mode at low ICE and IGBT operation mode at high ICE. Although the current flow mechanism is different between the two modes, it is preferable that CSR in both MOS IGBT operation modes be the same. It is also important to reduce the difference in CSR when the hybrid IGBT changes from MOS to IGBT operation mode. The new sense structure allows maintaining a constant CSR for the entire range of ICE. Moreover, CSR has low temperature dependence when the new sense device is adopted. As a result, ICE can be controlled more stably over a wide temperature range (-50degC - 125degC) even for hybrid IGBTs
Keywords :
MOS integrated circuits; insulated gate bipolar transistors; IGBT operation mode; MOS operation mode; collector current range; collector currents; constant current sense ratio; current flow; entire range; hybrid IGBT; sense device structure; switching device; Feedback circuits; Hybrid integrated circuits; Ice; Insulated gate bipolar transistors; Power integrated circuits; Temperature control; Temperature dependence; Temperature distribution; Temperature sensors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538937