High Frequency Switching of SiC High Voltage LJFET

Author

Sheng, Kuang ; Zhang, Yongxi ; Su, Ming ; Yu, Liangchun ; Zhao, Jian H.

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ

fYear

2008

Firstpage

229

Lastpage

232

Abstract

In this paper, inductive-load switching of a high voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high frequency, high temperature applications. A new ´capacitor-coupled´ gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the SiC HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperature-independent, high switching speed of the SiC LJFET makes it possible to hard-switch at 3 MHz, 200 V, 1.2 A and 250degC with good efficiency, significantly higher than silicon devices with similar voltage ratings.

Keywords

junction gate field effect transistors; MOS driver; capacitor-coupled gate driver circuitry; high frequency switching; high voltage lateral JFET; inductive load switching; junction gate field effect transistor; Driver circuits; Frequency; Power integrated circuits; Power semiconductor devices; Power semiconductor switches; Power supplies; Silicon carbide; Switching circuits; Temperature; Voltage; high frequency; junction field-effect transistor (JFET); power integrated circuits; silicon carbide (SiC);

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1532-8

Electronic_ISBN

978-1-4244-1533-5

Type

conf

DOI

10.1109/ISPSD.2008.4538940

Filename

4538940