Title :
Nanopower CMOS voltage reference circuit with 16 ppm/°C from 0°C to 150°C without resistors
Author :
Zhi Yang ; Mei Jiang
Author_Institution :
Coll. of Inf. Eng., Shenzhen Univ., Shenzhen, China
Abstract :
A voltage reference circuit providing a mean voltage of 281mV is proposed in this work. All transistors are biased in weak inversion region, and the 0.18um mix signal process is used in the simulation. This design is based on the weighted different threshold voltage between two devices, which has ultra low-power consumption of 1.5nW on 1V at room temperature. Besides, the temperature coefficient of voltage is as low as 16 ppm/°C at best@1V and 40 ppm/°C on average in a range from 0°C to 150 °C. The supply voltage of the proposed voltage circuit is from 0.65 to 5 V, and the power supply rejection ratio (PSRR) is -54dB@100Hz. The active area of circuit is 0.0013 mm2.
Keywords :
CMOS analogue integrated circuits; integrated circuit modelling; low-power electronics; mixed analogue-digital integrated circuits; power consumption; reference circuits; thermal analysis; PSRR; frequency 100 Hz; mix signal process; nanopower CMOS voltage reference circuit; power 1.5 nW; power supply rejection ratio; size 0.0013 mm; size 0.18 mum; temperature 0 degC to 150 degC; temperature coefficient; threshold voltage; ultra low-power consumption; voltage 0.65 V to 5 V; voltage 281 mV; CMOS integrated circuits; Generators; Integrated circuit modeling; MOSFET; Power demand; Threshold voltage;
Conference_Titel :
Consumer Electronics - Taiwan (ICCE-TW), 2015 IEEE International Conference on
Conference_Location :
Taipei
DOI :
10.1109/ICCE-TW.2015.7216978
