Title :
Investigation of silicon device processes using scanning probe microscopy
Author :
Radhakrishnan, M.K. ; Lee, Y.P. ; Poenar, D.P. ; Chai, T.C. ; Natarajan, M.
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
This paper presents the results of analysis carried out on semiconductor wafers, devices and packaging materials using various modes of Scanning Probe Microscopy (SPM), along with a brief review of the existing requirements of characterization. Further, the new SPM technique, Scanning Capacitance Microscopy, and its application for dopant characterization in semiconductor devices is detailed
Keywords :
characteristics measurement; doping profiles; elemental semiconductors; integrated circuit measurement; integrated circuit packaging; scanning probe microscopy; silicon; SPM technique; dopant characterization; packaging materials; scanning capacitance microscopy; scanning probe microscopy; semiconductor wafers; Atomic force microscopy; Atomic measurements; Chemicals; Pollution measurement; Scanning probe microscopy; Semiconductor devices; Semiconductor materials; Silicon devices; Surface topography; Thermal force;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632924
