Title :
State of the Art 10 kV NMOS Transistors
Author :
Das, Mrinal K. ; Callanan, Robert ; Capell, D. Craig ; Hull, Brett ; Husna, Fatima ; Richmond, James ; O´loughlin, Michael ; Paisley, Michael J. ; Powell, Adrian ; Zhan, Qingchun
Author_Institution :
Power R&D Devices Cree, Inc., Durham, NC
Abstract :
Rapidly improving 4 H-SiC material quality and a maturing MOS process/design have enabled the development of the largest 10 kV MOSFET to date and the first 10 kV n-IGBT capable of flowing 10 A and 4 A, respectively, with very low on- resistances. With 20 V on the gate, both devices have aVp~ 5V with a positive temperature coefficient for on-resistance that facilitates their use in a parallel configuration. Each device has its own advantages. The conductivity modulated n-IGBT offers higher current density operation (up to 100 A/cm ) while the majority carrier MOSFET offers extremely fast 5 kV switching with only 140 nsec of turn-off time and a manageable 160 W/cm of dissipated power at 20 kHz. These exciting results indicate that the 10 kV SiC NMOS switches may potentially revolutionize emerging high voltage, high frequency power electronics.
Keywords :
field effect transistor switches; insulated gate bipolar transistors; power MOSFET; silicon compounds; wide band gap semiconductors; NMOS switches; NMOS transistors; SiC; current 10 A; current 4 A; field effect transistor switches; frequency 20 kHz; insulated gate bipolar transistors; time 140 ns; voltage 10 kV; voltage 20 V; voltage 5 V; Conductivity; Current density; Energy management; MOS devices; MOSFET circuits; Power MOSFET; Process design; Silicon carbide; Switches; Temperature;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538946
