Title :
High performance PRAM cell scalable to sub-20nm technology with below 4F2 cell size, extendable to DRAM applications
Author :
Kim, I.S. ; Cho, S.L. ; Im, D.H. ; Cho, E.H. ; Kim, D.H. ; Oh, G.H. ; Ahn, D.H. ; Park, S.O. ; Nam, S.W. ; Moon, J.T. ; Chung, C.H.
Author_Institution :
Semicond. R&D Div., Samsung Electron. Co., Ltd., Yongin, South Korea
Abstract :
A PRAM cell with great scalability and high speed operation capability with excellent reliability below 20nm technology was demonstrated. This has the meaning of the potential applicable to the technology area of scaling limitation of DRAM cell. We fabricated a confined PRAM cell with 7.5nm×17nm of below 4F2. In particular, Sb-rich Ge-Sb-Te phase change material was employed for high speed operation below 30nsec. The excellent writing endurance performance was predicted to maintain up to 6.5E15cycles by reset program energy acceleration. Its data retention was 4.5 years at 85°C which is enough for DRAM application.
Keywords :
DRAM chips; antimony; germanium; tellurium; DRAM applications; Ge-Sb-Te; PRAM cell; size 20 nm; temperature 85 degC; time 4.5 yr; Films; International Electron Devices Meeting; Phase change materials; Phase change random access memory; Resistance; Writing; Sb-rich Ge-Sb-Te PCM; dash-confined cell; endurance; retention;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556228
