Title :
Highly-scalable novel access device based on Mixed Ionic Electronic conduction (MIEC) materials for high density phase change memory (PCM) arrays
Author :
Gopalakrishnan, Kavitha ; Shenoy, R.S. ; Rettner, C.T. ; Virwani, K. ; Bethune, D.S. ; Shelby, R.M. ; Burr, G.W. ; Kelloc, A. ; King, R.S. ; Nguyen, K. ; Bowers, A.N. ; Jurich, M. ; Jackson, B. ; Friz, A.M. ; Topuria, T. ; Rice, P.M. ; Kurd, B.N.
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
Abstract :
Phase change memory (PCM) could potentially achieve high density with large, 3Dstacked crosspoint arrays, but not without a BEOL-friendly access device (AD) that can provide high current densities and large ON/OFF ratios. We demonstrate a novel AD based on Cu-ion motion in novel Cu-containing Mixed Ionic Electronic Conduction (MIEC) materials[1, 2]. Experimental results on various device structures show that these ADs provide the ultra-high current densities needed for PCM, exhibit high ON/OFF ratios with excellent uniformity, are highly scalable, and are compatible with <;400°C Back-End-Of-the-Line (BEOL) fabrication.
Keywords :
electrical conductivity; phase change memories; 3D stacked crosspoint arrays; BEOL-friendly access device; Cu-ion motion; back-end-of-the-line fabrication; high current densities; high density phase change memory arrays; highly-scalable novel access device; mixed ionic electronic conduction materials; Copper; Current density; Electrodes; Ions; Optimization; Phase change materials; Access device; Diode; MIEC; PCM; PCRAM;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556229
