Title :
A biased percolation model for the analysis of electronic-device degradation
Author :
Gingl, Z. ; Pennetta, C. ; Kiss, L.B. ; Reggiani, L.
Author_Institution :
Exp. Phys., JATE Univ., Szeged, Hungary
Abstract :
The biased percolation model is proposed for investigating device degradation and failure associated with the generation of defects due to local Joule heating. The degradation process of a thin film is monitored by the evolution of damage pattern, current distribution, macroscopic sample resistance and its fluctuations, defect concentration and device lifetime. The conductor-insulator (CI) and conductor-superconductor (CS) like degradation processes are considered. The results can be used to propose non-destructive indicators for testing the reliability of samples and to interpret experiments
Keywords :
current distribution; failure analysis; percolation; semiconductor device models; semiconductor device reliability; thin film resistors; biased percolation model; conductor-insulator like degradation; conductor-superconductor like degradation; current distribution; damage pattern; defect concentration; device degradation; device lifetime; failure; local Joule heating; macroscopic sample resistance; reliability; thin film resistors; Current distribution; Degradation; Electric resistance; Fluctuations; Heating; Insulation; Resistors; Substrates; Thin film devices; Voltage;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632925
