Title :
Electron mobility in high-k Ge-MISFETs goes up to higher
Author :
Nishimura, T. ; Lee, C.H. ; Wang, S.K. ; Tabata, T. ; Kita, K. ; Nagashio, K. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
This paper will first discuss intrinsic advantages of high-pressure oxidation of Ge and then present further improvement of electron mobility in Ge n-MISFET using high-k gate stacks combined with high-pressure oxidation. The peak mobility is about 1500 cm2/Vsec, which is the highest one to date among unstrained Si and Ge MISFETs. Ge-CMOS is a strong candidate for beyond Si-CMOS.
Keywords :
MISFET; electron mobility; elemental semiconductors; germanium; high-k dielectric thin films; oxidation; CMOS; Ge; electron mobility; high pressure oxidation; high-k MISFET; high-k gate stack; Capacitance-voltage characteristics; Electron mobility; Films; High K dielectric materials; Logic gates; MISFETs; Oxidation; Ge; GeO2; Mobility; Rare-earth oxide;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556230
