Title :
Incremental FRESURF LDMOSFET structure for enhanced voltage blocking capability on a 0.13μm, SOI based technology
Author :
Khan, Tahir ; Khemka, Vishnu ; Zhu, Ronghua
Author_Institution :
Freescale Semicond., SMARTMOS Technol. Center, Tempe, AZ
Abstract :
In this paper, a novel structure based on the Floating RESURF LDMOSFET is proposed for enhanced off-state blocking capability. The new structure facilitates the implementation of FRESURF concept in thicker epi technologies for higher voltage tiers. An additional floating island is introduced, sandwiched between the standard drift region and heavily doped buried layer, which makes the Incremental FRESURF action feasible. Best case BVDSS of 130V with RDS,ON of 1.6mω-cm2 has been experimentally realized on a 0.13μm, SOI based smart power technology which is a significant improvement as compared to other state of the art integrated high voltage technologies
Keywords :
low-power electronics; power MOSFET; power integrated circuits; silicon-on-insulator; SOI based technology; enhanced voltage blocking capability; floating RESURF LDMOSFET structure; off-state blocking capability; smart power technology; thicker epi technologies; Automotive engineering; Breakdown voltage; Costs; Electric breakdown; Power semiconductor devices; Standards publication; Technological innovation; Topology;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538953
