Incremental FRESURF LDMOSFET structure for enhanced voltage blocking capability on a 0.13μm, SOI based technology

Author

Khan, Tahir ; Khemka, Vishnu ; Zhu, Ronghua

Author_Institution

Freescale Semicond., SMARTMOS Technol. Center, Tempe, AZ

fYear

2008

Firstpage

279

Lastpage

282

Abstract

In this paper, a novel structure based on the Floating RESURF LDMOSFET is proposed for enhanced off-state blocking capability. The new structure facilitates the implementation of FRESURF concept in thicker epi technologies for higher voltage tiers. An additional floating island is introduced, sandwiched between the standard drift region and heavily doped buried layer, which makes the Incremental FRESURF action feasible. Best case BV_DSS of 130V with R_DS,ON of 1.6mω-cm² has been experimentally realized on a 0.13μm, SOI based smart power technology which is a significant improvement as compared to other state of the art integrated high voltage technologies

Keywords

low-power electronics; power MOSFET; power integrated circuits; silicon-on-insulator; SOI based technology; enhanced voltage blocking capability; floating RESURF LDMOSFET structure; off-state blocking capability; smart power technology; thicker epi technologies; Automotive engineering; Breakdown voltage; Costs; Electric breakdown; Power semiconductor devices; Standards publication; Technological innovation; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1532-8

Electronic_ISBN

978-1-4244-1533-5

Type

conf

DOI

10.1109/ISPSD.2008.4538953

Filename

4538953