Title :
High doped drain double-Resurf 100V P-channel MOS on SOI 0.35 μm BCD technology
Author :
Palumbo, Vincenzo ; Venturato, Mirko ; Gallo, Michele ; Pozzobon, Fiorella ; Galbiati, Maria Paola ; Contiero, Claudio
Author_Institution :
FTM R&D, STMicroelectronics, Agrate Brianza
Abstract :
In this paper two different 100 V P-channel MOS structures on SOI 0.35 mum BCD technology have been compared. The higher drain doping for the drain extension PMOS with respect to the PDMOS is key to achieve not only good specific on-resistance but also robustness at high temperature reverse bias (HTRB) reliability test.
Keywords :
BIMOS integrated circuits; CMOS integrated circuits; semiconductor doping; silicon-on-insulator; BCD technology; PMOS; SOI; p-channel MOS; size 0.35 micron; Breakdown voltage; Dielectrics; Doping; Isolation technology; Plasma displays; Power semiconductor devices; Research and development; Robustness; Silicon; Testing;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538954
