Title :
Lateral Implanted RESURF GaN MOSFETs with BV up to 2.5 kV
Author :
Huang, W. ; Chow, T.P. ; Niiyama, Y. ; Nomura, T. ; Yoshida, S.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY
Abstract :
We report on the demonstration of enhancement- mode n-channel lateral implanted GaN high-voltage MOSFET with breakdown voltage up to 2.5 kV or specific on-resistance as low as 30 mOmegaldrcm2. With proper RESURF dose, drain current up to 0.1 A and breakdown voltage up to 1570 V is realized on the same device. The reliability lifetime defined by the failure criteria of DeltaIp/Ip=20% was determined to be over 11 years at 250degC.
Keywords :
MOSFET; electric breakdown; RESURF MOSFET; breakdown voltage; n-channel lateral implanted MOSFET; Doping; Epitaxial layers; Gallium nitride; Implants; MOSFETs; Medical simulation; Silicon on insulator technology; Substrates; Thermal conductivity; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538956
