DocumentCode :
1727841
Title :
Evaluation of a planar process APD with a LSO scintillator to measure depth of interaction
Author :
Gramsch, Ernesto ; Avila, Ricardo E. ; Ferrer, Jorge ; Bui, Peter
Author_Institution :
Phys. Dept., Univ. de Santiago, Chile
Volume :
2
fYear :
2001
Firstpage :
889
Abstract :
We have evaluated the performance of an APD/LSO combination for use in PET systems. We have used a recently developed APD detector in combination with a 3 × 3 × 30 mm3 LSO scintillator to measure the depth of interaction from 22Na photons. The detectors were built using standard planar technology for silicon devices. Photodiodes with 3 mm diameter active area have been produced by deep boron diffusion, followed by shallow boron and phosphor diffusion. Because the structure has not been optimized yet, we only obtained a gain of 6 at 1300 V. In spite of the low gain, we have obtained a resolution of 24 % with a single APD and the 3 × 3 × 30 mm3 scintillator. The energy spectra acquired using two APDs connected to the small sides of the scintillator depends on the position of interaction and varies from 25 to 50 %. The measurements allow to obtain the depth of interaction inside the crystal with an uncertainty of about 2 mm.
Keywords :
amplification; avalanche photodiodes; silicon radiation detectors; solid scintillation detectors; 1300 V; LSO scintillator; Lu2SiO4O:Ce; PET; Si:B; Si:P; avalanche photodiodes; depth of interaction; gain; photodiodes; Boron; Detectors; Doping; Electric breakdown; Energy resolution; Neutrons; Phosphors; Photodiodes; Positron emission tomography; Silicon devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2001 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-7324-3
Type :
conf
DOI :
10.1109/NSSMIC.2001.1009698
Filename :
1009698
Link To Document :
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