Title :
600V-class Super Junction MOSFET with High Aspect Ratio P/N Columns Structure
Author :
Sakakibara, Jun ; Noda, Yoshitaka ; Shibata, Takumi ; Nogami, Shoji ; Yamaoka, Tomonori ; Yamaguchi, Hitoshi
Author_Institution :
Res. Labs., DENSO Corp., Nisshin
Abstract :
A Super Junction (SJ) MOSFET with high aspect ratio p/n columns structure has been proposed to improve the trade-off relationship between breakdown voltage and specific on-resistance (Ron)- We have proposed a new trench filling epitaxial growth technique to fabricate this structure. In this work, we tried to apply this method to 600 V-class SJ-MOSFETs. We succeeded in fabricating p/n columns structure of which the aspect ratio is 25. It shows that its Ron is lower than that of IGBTs, and is the lowest in the reported 600 V-class Si devices.
Keywords :
epitaxial growth; power MOSFET; semiconductor junctions; silicon; aspect ratio pn column structure; breakdown voltage; super junction MOSFET; trench filling epitaxial growth technique; voltage 600 V; Doping; Epitaxial growth; Fabrication; Filling; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power semiconductor devices; Stacking; Substrates;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538958
