Title :
Study of channel length scaling in large-scale graphene FETs
Author :
Han, Shu-Jen ; Sun, Yanning ; Bol, Ageeth A. ; Haensch, Wilfried ; Chen, Zhihong
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
This work presents a detailed study of transport in field effect transistors using transferred graphene grown by chemical vapor deposition. For the first time, we observe a shift of Dirac point in graphene devices as a consequence of gate length scaling. This shift has been identified as one of the signatures of short channel effects in graphene. In addition, an electron-hole asymmetry observed in short channel devices suggests a strong impact from graphene/metal contacts.
Keywords :
chemical vapour deposition; field effect transistors; semiconductor device manufacture; Dirac point; channel length scaling; chemical vapor deposition; electron-hole asymmetry; field effect transistors; gate length scaling; graphene devices; graphene/metal contacts; large-scale graphene FET; short channel devices; short channel effects; Contact resistance; Copper; FETs; Logic gates; Substrates;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556239
