DocumentCode :
1727958
Title :
Comparison of carrier velocity in 0.25 μm gate-length conventional, pseudomorphic, and lattice-matched modulation-doped FETs at 300 K and 77 K
Author :
Fu, S.T. ; Liu, S.-M.J. ; Das, M.B. ; Chao, P.C. ; Duh, K.-H.G. ; Ho, Pin ; Ballingall, J.M.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fYear :
1989
Firstpage :
19
Lastpage :
23
Abstract :
The microwave characterization of 0.25-μm gate-length MODFETs at 300 and 77 K is reported. Microwave S-parameter measurements of MODFETs from 0.45 to 20 GHz were used to extract their HF equivalent network parameters. After allowing for the parasitic gate and drain-to-gate feedback capacitances, the intrinsic unity-current gain frequency was determined. Using a theoretical model, the effective carrier saturation velocity and average velocity (νav) were obtained for the conventional AlGaAs/GaAs, the pseudomorphic AlGaAs/InGaAs/GaAs, and lattice-matched InAlAs/InGaAs/InAlAs on InP samples at 300 K and 77 K. The extracted values of νa range from 0.82×107 cm/s to 3.84×107 cm/s, respectively, depending on the type of MODFET and operating temperature. These high values of νav indicate that the velocity overshoot effect is present in the devices tested
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; carrier mobility; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor device testing; solid-state microwave devices; 0.25 micron; 0.45 to 20 GHz; 300 K; 77 K; AlGaAs-GaAs; AlGaAs-InGaAs-GaAs; GaAs; HF equivalent network parameters; InAlAs-InGaAs-InAlAs; InP; MODFETs; S-parameter; carrier saturation velocity; carrier velocity; gate-length; intrinsic unity-current gain frequency; lattice matched MODFET; microwave characterization; model; operating temperature; parasitic capacitance; pseudomorphic MODFET; velocity overshoot effect; Feedback; Gallium arsenide; HEMTs; Hafnium; Indium compounds; Indium gallium arsenide; MODFETs; Microwave measurements; Parasitic capacitance; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on
Conference_Location :
Burlington, VT
Type :
conf
DOI :
10.1109/LTSE.1989.50174
Filename :
50174
Link To Document :
بازگشت