DocumentCode :
1727973
Title :
Phenomenological understanding of Sn migration in ceramic-chip capacitors
Author :
Raman, Arun ; Sahasrabudhe, Shubhada ; Dietz, Lyndell ; Hossain, Mohammad
Author_Institution :
Intel Corp., Chandler, AZ, USA
fYear :
2011
Firstpage :
541
Lastpage :
546
Abstract :
Electrochemical migration (ECM) is a well documented phenomenon in literature involving the transport of metal ions under the influence of voltage and in the presence of an electrolyte. This paper describes the classic Sn migration phenomenon that occurs with SAC305 solder used to attach capacitors on Intel´s microelectronic packages, under accelerated humidity voltage tests. Additional lab-scale surface insulation resistance (SIR) tests, which replicated the accelerated test failures, were performed to understand the impact of moisture level, the critical voltage required and effect of ionic environment on the Sn migration phenomenon. As capacitor sizes continue to get smaller, leading to a greater risk of solder metal migration with electrode lines getting closer to each other, results from this study can be expected to improve the design of packages in future technologies.
Keywords :
ceramic capacitors; electrolytes; electromigration; integrated circuit packaging; solders; Intel microelectronic packages; SAC305 solder; Sn migration; accelerated test failures; ceramic-chip capacitors; electrochemical migration; electrolyte; humidity voltage tests; lab-scale surface insulation resistance tests; metal ions; Capacitors; Cathodes; Electronic countermeasures; Ions; Moisture; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
Conference_Location :
Lake Buena Vista, FL
ISSN :
0569-5503
Print_ISBN :
978-1-61284-497-8
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2011.5898564
Filename :
5898564
Link To Document :
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