DocumentCode
1727977
Title
An "all-p-type" termination structure for silicon microstrip detectors
Author
Betta, Gian-Franco Dalla ; Boscardin, Maurizio ; Bosisio, Luciano ; Dittongo, Selenia ; Gregori, Paolo ; Rachevskaia, Irina ; Verzellesi, Giovanni ; Zorzi, Nicola
Author_Institution
ITC-IRST, Trento, Italy
Volume
2
fYear
2001
Firstpage
906
Abstract
A novel termination structure for silicon microstrip detectors is proposed, featuring all-p-type multiguards and scribe-line implant, as well as inward metal field-plates providing almost complete coverage of the passivation-oxide external surface. The structure is intended for detector long-term stability improvement and fabrication-process simplification. Proper design of the multiguard layout enables a very stable behavior at relatively high bias voltages to be achieved.
Keywords
silicon radiation detectors; Si; Si microstrip detectors; all-p-type multiguards; all-p-type termination structure; detector long-term stability improvement; fabrication-process simplification; inward metal field-plates; passivation-oxide external surface; scribe-line implant; Humidity; Implants; Leakage current; Microstrip; Silicon radiation detectors; Stability; Surface contamination; Telephony; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2001 IEEE
ISSN
1082-3654
Print_ISBN
0-7803-7324-3
Type
conf
DOI
10.1109/NSSMIC.2001.1009702
Filename
1009702
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