Title :
An "all-p-type" termination structure for silicon microstrip detectors
Author :
Betta, Gian-Franco Dalla ; Boscardin, Maurizio ; Bosisio, Luciano ; Dittongo, Selenia ; Gregori, Paolo ; Rachevskaia, Irina ; Verzellesi, Giovanni ; Zorzi, Nicola
Author_Institution :
ITC-IRST, Trento, Italy
Abstract :
A novel termination structure for silicon microstrip detectors is proposed, featuring all-p-type multiguards and scribe-line implant, as well as inward metal field-plates providing almost complete coverage of the passivation-oxide external surface. The structure is intended for detector long-term stability improvement and fabrication-process simplification. Proper design of the multiguard layout enables a very stable behavior at relatively high bias voltages to be achieved.
Keywords :
silicon radiation detectors; Si; Si microstrip detectors; all-p-type multiguards; all-p-type termination structure; detector long-term stability improvement; fabrication-process simplification; inward metal field-plates; passivation-oxide external surface; scribe-line implant; Humidity; Implants; Leakage current; Microstrip; Silicon radiation detectors; Stability; Surface contamination; Telephony; Temperature; Voltage;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2001 IEEE
Print_ISBN :
0-7803-7324-3
DOI :
10.1109/NSSMIC.2001.1009702
