Operation of GaAs MESFETs at cryogenic temperatures

Author

Liang, C.L. ; Wong, H. ; Cheung, N.W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1989

Firstpage

24

Lastpage

27

Abstract

The device performance of GaAs MESFETs at both quadratic and subthreshold regions was investigated for temperatures ranging from 350 K to 80 K. The measurements at the quadratic region can be described by the empirical hyperbolic tangent model. The device parameters of the model vary with operating temperature. At the subthreshold region, a physical model for the subthreshold drain current of GaAs MESFETs was developed on the basis of an electron-diffusion mechanism. The model was verified by measurements on devices of various gate lengths for different drain and gate bias conditions in the operating temperature range from 350 K to 80 K

Keywords

III-V semiconductors; Schottky gate field effect transistors; cryogenics; gallium arsenide; semiconductor device models; 80 to 350 K; GaAs; cryogenic temperatures; electron-diffusion mechanism; gate bias; gate lengths; hyperbolic tangent model; operating temperature range; physical model; quadratic region; subthreshold drain current; subthreshold regions; Analytical models; Cryogenics; Electrons; Gallium arsenide; Length measurement; MESFETs; Subthreshold current; Temperature distribution; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on

Conference_Location

Burlington, VT

Type

conf

DOI

10.1109/LTSE.1989.50175

Filename

50175