DocumentCode
1728248
Title
High coupling coefficient Temperature compensated FBAR resonator for oscillator application with wide pulling range
Author
Zou, Qiang ; Lee, Donald ; Bi, Frank ; Ruby, Richard ; Small, Martha ; Ortiz, Steve ; Oshmyansky, Yury ; Kaitila, Jyrki
Author_Institution
Wireless Semicond. Div., Avago Technol. US Inc., Fort Collins, CO, USA
fYear
2010
Firstpage
646
Lastpage
651
Abstract
This paper demonstrates two variations of Temperature compensated (TempCo) FBAR resonators with high Kt2. One 1.5 GHz non-symmetric stack design TempCo FBAR resonator has a Kt2 of 4.28% and linear TCF of 0 ppm/°C. A second, quasi-symmetric stack design 1.5GHz TempCo FBAR resonator has Kt2 as high as 5.6% and linear TCF of -6 ppm/°C. Significant Kt2 improvement comes from optimal design of stack film, interposer electrode effect and novel process development of a sealant for the oxide to protect it from HF etching. This paper also discusses the trade-off between two parameters (linear TCF vs. Kt2). High Kt2 TempCo FBAR resonator is ideal for FBAR oscillator application with wide frequency pulling range.
Keywords
acoustic resonators; oscillators; HF etching; frequency 1.5 GHz; high coupling coefficient temperature; interposer electrode effect; nonsymmetric stack design FBAR resonator; oscillator application; stack film; wide frequency pulling range; Couplings; Electrodes; Etching; Film bulk acoustic resonators; Impedance; Oscillators; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium (FCS), 2010 IEEE International
Conference_Location
Newport Beach, CA
ISSN
1075-6787
Print_ISBN
978-1-4244-6399-2
Type
conf
DOI
10.1109/FREQ.2010.5556250
Filename
5556250
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