• DocumentCode
    1728248
  • Title

    High coupling coefficient Temperature compensated FBAR resonator for oscillator application with wide pulling range

  • Author

    Zou, Qiang ; Lee, Donald ; Bi, Frank ; Ruby, Richard ; Small, Martha ; Ortiz, Steve ; Oshmyansky, Yury ; Kaitila, Jyrki

  • Author_Institution
    Wireless Semicond. Div., Avago Technol. US Inc., Fort Collins, CO, USA
  • fYear
    2010
  • Firstpage
    646
  • Lastpage
    651
  • Abstract
    This paper demonstrates two variations of Temperature compensated (TempCo) FBAR resonators with high Kt2. One 1.5 GHz non-symmetric stack design TempCo FBAR resonator has a Kt2 of 4.28% and linear TCF of 0 ppm/°C. A second, quasi-symmetric stack design 1.5GHz TempCo FBAR resonator has Kt2 as high as 5.6% and linear TCF of -6 ppm/°C. Significant Kt2 improvement comes from optimal design of stack film, interposer electrode effect and novel process development of a sealant for the oxide to protect it from HF etching. This paper also discusses the trade-off between two parameters (linear TCF vs. Kt2). High Kt2 TempCo FBAR resonator is ideal for FBAR oscillator application with wide frequency pulling range.
  • Keywords
    acoustic resonators; oscillators; HF etching; frequency 1.5 GHz; high coupling coefficient temperature; interposer electrode effect; nonsymmetric stack design FBAR resonator; oscillator application; stack film; wide frequency pulling range; Couplings; Electrodes; Etching; Film bulk acoustic resonators; Impedance; Oscillators; Simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium (FCS), 2010 IEEE International
  • Conference_Location
    Newport Beach, CA
  • ISSN
    1075-6787
  • Print_ISBN
    978-1-4244-6399-2
  • Type

    conf

  • DOI
    10.1109/FREQ.2010.5556250
  • Filename
    5556250