• DocumentCode
    1728612
  • Title

    Modeling characterization and reliability analysis of a power system in package

  • Author

    Liu, Yumin ; Newberry, Bill ; Liu, Yong ; Martin, Stephen

  • Author_Institution
    Fairchild Semicond. Corp., Portland, ME, USA
  • fYear
    2011
  • Firstpage
    731
  • Lastpage
    739
  • Abstract
    A power system in package (SiP), which has high-side (HS) and low-side (LS) MOSFETs, and a driver IC, is investigated in this paper. To reduce cost and improve time to market, electrical, thermal and mechanical virtual prototyping are applied to investigate the electrical, thermal and reliability performance of the power SiP. Totally 8 DoE legs are designed to study the impact of bond wire diameter, bond wire numbers, and die size of LS and HS MOSFETs. In order to minimize the package effects on RDson and switching noise, the resistance and inductance for all DoE models are examined, and the efficiencies for all models are calculated. The thermal characterization of Theta_ja according to the JEDEC standards is conducted with 3 types of thermal test boards. Mechanical and reliability simulation including mold cure and reflow simulation with/without moisture are conducted to check if die cracking, or delamination might occur under thermal stress. The moisture related reliability model is improved to calculate the equivalent CTE of the mold compound according to its moisture concentration distribution contour, and the simulation results are compared and discussed with those by using the original method.
  • Keywords
    MOSFET; delamination; driver circuits; integrated circuit packaging; semiconductor device packaging; semiconductor device reliability; system-in-package; thermal stresses; virtual prototyping; JEDEC standards; SiP; bond wire diameter; bond wire numbers; delamination; die cracking; driver IC; electrical virtual prototyping; high-side MOSFET; low-side MOSFET; mechanical virtual prototyping; moisture concentration distribution contour; moisture related reliability model; mold compound; power system in package; reflow simulation; reliability simulation analysis; thermal stress; thermal test boards; thermal virtual prototyping; MOSFETs; Semiconductor device modeling; Stress; Thermal resistance; US Department of Energy; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-61284-497-8
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2011.5898594
  • Filename
    5898594