DocumentCode
1728694
Title
A simple technique to increase the switching speed of the MOS transistor
Author
Brezeanu, Gheorghe ; Mitu, Florin ; Dilimot, Gheorghe ; Enache, I.
Author_Institution
Fac. of Electron. & Telecommun., Politehnic Univ. of Bucharest, Romania
Volume
2
fYear
1997
Firstpage
743
Abstract
This paper describes a new method to improve the switching speed of MOS transistors by the decrease of the turn-off time. The bulk of the transistor is used as the second command gate. A simple analog MOS switch at which the gate and bulk voltages have the same time dependence is proposed. The circuit realizes an increase of the switching speed up to 50% for n-MOS transistor and around 20% for p-MOS. Also, SPICE circuit simulations and a first order modelling show superior performance of this technique over conventional switch
Keywords
MOSFET; SPICE; field effect transistor switches; semiconductor device models; MOS transistor; SPICE circuit simulation; analog MOS switch; first order model; second command gate; switching speed; turn-off time; Capacitance; Circuit simulation; Low voltage; MOSFETs; Power semiconductor switches; Power system modeling; SPICE; Schottky diodes; Switching circuits; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.632951
Filename
632951
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