A numerical study of the temperature dependence of the unity gain frequency of silicon bipolar transistors

Author

Chrzanowska-Jeske, Malgorzata ; Jaeger, Richard C.

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

fYear

1989

Firstpage

33

Lastpage

37

Abstract

The dependence of the unity gain frequency f_T of a silicon double-diffused bipolar transistor on temperature and collector current density at 77-300 K is discussed. The f_T characteristics are generated by the low-temperature bipolar transistor simulator BILOW. Physical explanations of the f_T plots are given on the basis of simulated distributions of various internal parameters of the bipolar transistor. The temperature dependence of f_T is found to be strongly influenced by the charge of the minority carriers trapped in the base on the compensated impurity atoms. The electric-field distribution within the base is changed as a result of the additional charge

Keywords

bipolar transistors; minority carriers; numerical analysis; semiconductor device models; 77 to 300 K; BILOW; Si; bipolar transistors; collector current density; compensated impurity atoms; electric-field distribution; internal parameters; minority carriers; numerical study; simulator; temperature dependence; unity gain frequency; Bipolar transistors; Character generation; Current density; Delay effects; Electron traps; Frequency; Impurities; Microelectronics; Silicon; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on

Conference_Location

Burlington, VT

Type

conf

DOI

10.1109/LTSE.1989.50177

Filename

50177