DocumentCode :
1728832
Title :
Electrostatically transduced face-shear mode silicon MEMS microresonator
Author :
Lin, Angel T -H ; Yan, Jize ; Seshia, Ashwin A.
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
fYear :
2010
Firstpage :
534
Lastpage :
538
Abstract :
Silicon microresonators are increasingly viewed as attractive candidates for a variety of frequency selective signal processing applications due to miniaturization and potential for integration with CMOS. In this work, we present a new electrostatically transduced face-shear (FS) mode square plate single crystal silicon resonator that rivals previously reported bulk mode resonator topologies and demonstrates good frequency scaling. A microfabricated face-shear mode resonator with 800 μm side length demonstrates a resonant frequency of 3.638 MHz, Q of 11193 in air and 836283 in vacuum as well as a TCF of -19ppm/K.
Keywords :
CMOS integrated circuits; electrostatic devices; microfabrication; micromechanical resonators; silicon; CMOS; bulk mode resonator topologies; electrostatically transduced face-shear mode; frequency 3.638 MHz; frequency selective signal processing; microfabricated face-shear mode resonator; silicon MEMS microresonator; square plate single crystal silicon resonator; Electrodes; Frequency measurement; Resonant frequency; Shape; Silicon; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium (FCS), 2010 IEEE International
Conference_Location :
Newport Beach, CA
ISSN :
1075-6787
Print_ISBN :
978-1-4244-6399-2
Type :
conf
DOI :
10.1109/FREQ.2010.5556271
Filename :
5556271
Link To Document :
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