DocumentCode
1728852
Title
Instability in micromachined electrostatic torsion actuators with full travel range
Author
Zhixiong Xiao ; Farmer, K.R.
Author_Institution
Microelectron. Res. Center, New Jersey Inst. of Technol., Newark, NJ, USA
Volume
2
fYear
2003
Firstpage
1431
Abstract
By studying pull-in behavior, we investigate the stability of single-crystal silicon, rectangular, electrostatic torsion actuators in a variety of ambients and configurations. These structures are designed for full travel range using partial-plate buried electrodes on either oxidized silicon or nitrided glass substrates. We find that the presence of charge in both systems, due at least in part to moisture on insulating surfaces surrounding the buried partial plate, has a large effect on pull-in performance, even in vacuum and flowing dry nitrogen. We are able to minimize this charge effect by using devices fabricated with ground shield electrodes. These improved structures exhibit stable actuation in air without pull-in at a travel range that exceeds 90%. This is among the highest measured stable values reported in the literature.
Keywords
electrostatic actuators; moisture; silicon; stability; torsion; Si; SiO/sub 2/; buried partial plate; charge effect; flowing dry nitrogen; instability; insulating surfaces; micromachined electrostatic torsion actuators; moisture; nitrided glass substrates; oxidized silicon; partial-plate buried electrodes; single crystal silicon; Electrodes; Electrostatic actuators; Electrostatic measurements; Glass; Insulation; Moisture; Nitrogen; Silicon; Stability; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7731-1
Type
conf
DOI
10.1109/SENSOR.2003.1217044
Filename
1217044
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