DocumentCode
1728886
Title
Polarization control of InAs quantum dot semiconductor laser using external light injection technique
Author
Peng, P.C. ; Lan, R.L. ; Hsu, S.T. ; Lu, H.H. ; Lin, G. ; Kuo, H.C. ; Lin, G.R. ; Chi, J.Y.
Author_Institution
Dept. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
fYear
2010
Firstpage
167
Lastpage
168
Abstract
This work investigates experimentally the polarization control of InAs-InGaAs quantum dot (QD) semiconductor laser. The polarization characteristic of QD laser at different bias current is studied. The results of this study will be useful in the field of optical signal processing.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; optical control; quantum dot lasers; InAs-InGaAs; Polarization; bias current; external light injection; optical signal processing; polarization control; quantum dot semiconductor laser; Optical attenuators; Optical polarization; Optical signal processing; Quantum dot lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical MEMS and Nanophotonics (OPT MEMS), 2010 International Conference on
Conference_Location
Sapporo
Print_ISBN
978-1-4244-8926-8
Electronic_ISBN
978-1-4244-8925-1
Type
conf
DOI
10.1109/OMEMS.2010.5672130
Filename
5672130
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